| 摘要 |
In a semiconductor device manufacturing method of the present invention, a polysilicon film and a silicon nitride film are deposited on an upper surface of an epitaxial layer. Patterning is performed so that the polysilicon film and the silicon nitride film are left in regions in which a LOCOS oxide film is to be formed. Then, using steps of the polysilicon film and the silicon nitride film as alignment marks, a diffusion layer as drain regions is formed. Subsequently, the LOCOS oxide film is formed. This manufacturing method enables the diffusion layer to be formed with high position accuracy without being affected by a shape of the LOCOS oxide film.
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