发明名称 Flash memory device capable of preventing coupling effect and program method thereof
摘要 The present invention provides a flash memory device that includes a word line; even page cells that are physically adjacent and connected to the word line; and odd page cells that are physically adjacent and connected to the word line, wherein at a program operation, page data is programmed in either one of the even page cells or the odd page cells.
申请公布号 US7535761(B2) 申请公布日期 2009.05.19
申请号 US20060637415 申请日期 2006.12.12
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 PARK KI-TAE;LEE YEONG-TAEK;KIM KI-NAM
分类号 G11C11/34 主分类号 G11C11/34
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