发明名称 |
Phase change random access memory and related methods of operation |
摘要 |
In a phase change random access memory (PRAM) device, data is programmed in selected memory cells using a plurality of program loops. In each program loop, division program operations for cell groups including the selected memory cells are performed in consecutive timeslots.
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申请公布号 |
US7535747(B2) |
申请公布日期 |
2009.05.19 |
申请号 |
US20070844512 |
申请日期 |
2007.08.24 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
LEE KWANG-JIN;CHO WOO-YEONG |
分类号 |
G11C11/00 |
主分类号 |
G11C11/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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