发明名称 |
Process for producing an integrated circuit comprising a capacitor |
摘要 |
An integrated circuit is produced to include interconnection levels each incorporating a metallization level covered with an insulating material. The integrated circuit includes at least one capacitor possessing at least one part lying within a single interconnection level. The capacitor is produced before the interconnection level is produced. The covering of part of the capacitor with an insulating protective layer occurs before the metallization level of the interconnection level is produced.
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申请公布号 |
US7534692(B2) |
申请公布日期 |
2009.05.19 |
申请号 |
US20060406058 |
申请日期 |
2006.04.18 |
申请人 |
STMICROELECTRONICS |
发明人 |
JAGUENEAU THIERRY;GIRAUDIN JEAN-CHRISTOPHE;ROSSATO CHRISTINE |
分类号 |
H01L21/20 |
主分类号 |
H01L21/20 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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