发明名称 Structure and method for bond pads of copper-metallized integrated circuits
摘要 A metal structure for a contact pad of a wafer or substrate (101), which have copper interconnecting traces (102) surrounded by a barrier metal layer (103). The wafer or substrate is protected by an insulating overcoat (104). In the structure, the barrier metal layer is selectively exposed by a window (110) in the insulating overcoat. A layer of copper (105), adherent to the barrier metal, conformally covers the exposed barrier metal. Preferably, the copper layer is deposited by sputtering using a shadow mask. A layer of nickel (106) is adherent to the copper layer and a layer of noble metal (106) is adherent to the nickel layer. The noble metal may be palladium, or gold, or a palladium layer with an outermost gold layer. Preferably, the nickel and noble metal layers are deposited by electroless plating.
申请公布号 US7535104(B2) 申请公布日期 2009.05.19
申请号 US20070733859 申请日期 2007.04.11
申请人 TEXAS INSTRUMENTS INCORPORATED 发明人 TEST HOWARD R;ABBOTT DONALD C
分类号 H01L23/48 主分类号 H01L23/48
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