发明名称 Computing the characteristics of a field-effect-transistor (FET)
摘要 A coefficient indicating the relationship between a measurement voltage of voltage measuring unit and a voltage drop in a drain bias voltage due to drain current is determined based on at least an S parameter of a measuring system and an input impedance of the measuring unit. A voltage drop at the drain is determined from the coefficient. Based on the determined voltage drop, a drain bias voltage actually applied to the drain of an FET is determined. Also, a coefficient for converting the measurement voltage of the measuring unit into a drain current is determined based on at least an S parameter of a measuring system and the input impedance of the voltage measuring unit and an electrical length of the measuring system if necessary. Based on the determined coefficient, a drain current actually flowing in the FET is determined.
申请公布号 US7535246(B2) 申请公布日期 2009.05.19
申请号 US20060647116 申请日期 2006.12.28
申请人 AGILENT TECHNOLOGIES, INC. 发明人 OKAWA YASUSHI
分类号 G01R31/26 主分类号 G01R31/26
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