发明名称 |
SEMICONDUCTOR DEVICE, METHOD OF MANUFACTURING THE SAME AND OPERATION METHOD OF THE SAME |
摘要 |
<p>Described are a semiconductor device, methods of forming the semiconductor device and methods of operating the semiconductor device. The semiconductor device includes a gate electrode and laminated charge trap layers interposed between substrates. The methods of forming the semiconductor device include forming a gate stacked structure including insulating layers having a different etching selectivity, forming spaces on sidewalls of the gate stacked structure using an etching selectivity and forming charge trap layers in the spaces. The methods of operating the semiconductor device include programming trap layers by controlling a voltage applied to a gate electrode.</p> |
申请公布号 |
KR20090049834(A) |
申请公布日期 |
2009.05.19 |
申请号 |
KR20070116146 |
申请日期 |
2007.11.14 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
KOH, KWANG WOOK |
分类号 |
H01L27/115 |
主分类号 |
H01L27/115 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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