发明名称 |
Thin-film capacitor with a field modification layer and methods for forming the same |
摘要 |
A method for forming a capacitor includes providing a metal-containing bottom electrode, forming a capacitor insulator over the metal-containing bottom electrode, forming a metal-containing top electrode over the capacitor insulator, and forming a dielectric-containing field modification layer over the capacitor insulator and at least partially surrounding the metal-containing top electrode. Forming the dielectric-containing field modification layer may include oxidizing a sidewall of the metal-containing field modification layer. A barrier layer may be formed over the capacitor insulator prior to forming the metal-containing top electrode.
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申请公布号 |
US7534693(B2) |
申请公布日期 |
2009.05.19 |
申请号 |
US20060326524 |
申请日期 |
2006.01.04 |
申请人 |
FREESCALE SEMICONDUCTOR, INC. |
发明人 |
ROBERTS DOUGLAS R.;LUCKOWSKI ERIC D.;RAUF SHAHID;VENTZEK PETER L. G. |
分类号 |
H01L21/20 |
主分类号 |
H01L21/20 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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