发明名称 |
Method of forming enhanced device via transverse stress |
摘要 |
In the present invention, a PMOS device comprises a channel region formed in {100} silicon with first and second source/drain region disposed on either side of the channel region. The channel region is oriented such that a current flow between the source/drain regions has a <100> direction through the channel region. Dielectric regions create a compressive stress on the channel region perpendicular to the current flow.
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申请公布号 |
US7534676(B2) |
申请公布日期 |
2009.05.19 |
申请号 |
US20070828961 |
申请日期 |
2007.07.26 |
申请人 |
TEXAS INSTRUMENTS INCORPORATED |
发明人 |
BOWEN ROBERT C.;WANG YUGUO |
分类号 |
H01L21/8236 |
主分类号 |
H01L21/8236 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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