发明名称 Semiconductor device and method of manufacturing same
摘要 The present invention provides a semiconductor device capable of improving productivity while maintaining electrical characteristics, and a manufacturing method thereof. One characteristic point of the present invention is that a plating processing condition (A) for forming a metal wiring layer (redistribution wiring) corresponding to a first conductive layer and a plating processing condition (B) for forming a post electrode corresponding to a second conductive layer are made different from each other.
申请公布号 US7534664(B2) 申请公布日期 2009.05.19
申请号 US20070902757 申请日期 2007.09.25
申请人 OKI ELECTRIC INDUSTRY CO., LTD. 发明人 WATANABE KIYONORI
分类号 H01L21/00;H01L23/12;H01L21/60;H01L23/31;H01L23/485;H01L23/525 主分类号 H01L21/00
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