发明名称 |
Semiconductor device and method of manufacturing same |
摘要 |
The present invention provides a semiconductor device capable of improving productivity while maintaining electrical characteristics, and a manufacturing method thereof. One characteristic point of the present invention is that a plating processing condition (A) for forming a metal wiring layer (redistribution wiring) corresponding to a first conductive layer and a plating processing condition (B) for forming a post electrode corresponding to a second conductive layer are made different from each other.
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申请公布号 |
US7534664(B2) |
申请公布日期 |
2009.05.19 |
申请号 |
US20070902757 |
申请日期 |
2007.09.25 |
申请人 |
OKI ELECTRIC INDUSTRY CO., LTD. |
发明人 |
WATANABE KIYONORI |
分类号 |
H01L21/00;H01L23/12;H01L21/60;H01L23/31;H01L23/485;H01L23/525 |
主分类号 |
H01L21/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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