| 摘要 |
A free layer functions such that a magnetization direction changes depending on an external magnetic field, and is made up of a multilayer structure including a first Heusler alloy layer, and a fixed magnetization layer takes a form wherein an inner pin layer and an outer pin layer are stacked one upon another with a nonmagnetic intermediated layer sandwiched between them. The inner pin layer is made up of a multilayer structure including a second Heusler alloy layer. The first and second Heusler alloy layers are each formed by a co-sputtering technique using a split target split into at least two sub-targets in such a way as to constitute a Heusler alloy layer composition. When the Heusler alloy layer is formed, therefore, it is possible to bring up a film-deposition rate, improve productivity, and improve the performance of the device.
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