| 摘要 |
<p>A method of manufacturing a thin film transistor array substrate according to the present invention includes: forming a pattern made of a first conductive film; stacking a gate insulating film, a semiconductor layer, and a resist in the stated order; forming a resist pattern having a step structure in a thickness direction; forming an exposed area of the first conductive film and a pattern of the semiconductor layer by using the resist pattern; forming a pattern made of a second conductive film in contact with the first conductive film in the exposed area of the first conductive film; and forming a pattern made of a third conductive film. The first conductive film forms a gate electrode, and the second conductive film forms each of a source electrode and a drain electrode. The third conductive film forms a pixel electrode, and the second conductive film is coated with an upper-layer film.</p> |
