| 摘要 |
The present invention is directed to a semiconductor substrate having an electrode formed thereon, the electrode including at least silver and glass frit, the electrode including: a multi-layered structure constituted of a first electrode layer joined directly to the semiconductor substrate, and an upper electrode layer formed of at least one layer and disposed on the first electrode layer; wherein the upper electrode layer is formed by firing a conductive paste having a total silver content of 75 wt% or more and 95 wt% or less, the content of silver particles having an average particle diameter of 4 µm or greater and 8 µm or smaller with respect to the total silver content in the upper electrode layer being higher than that in the first electrode layer. As a consequence, it is possible to form the electrode, which has the high aspect ratio and hardly suffers an inconvenience such as a break, on the semiconductor substrate by a simple method. |
