SEMICONDUCTOR DEVICE AND ITS MANUFACTURING METHOD

摘要

PROBLEM TO BE SOLVED: To provide a semiconductor device including a FIN-type transistor excellent in characteristics by accurately forming a FIN-shaped semiconductor and a gate electrode or by reducing fluctuation in characteristics among elements.

SOLUTION: The semiconductor device includes the FIN-shaped semiconductor 10 having a source region at one side and a drain region at the other side, and a gate electrode 17 formed to surround the FIN-shaped semiconductor 10 via a gate insulation film between the source and drain regions. As one of solutions of the invention, a metal material or a silicide material capable of wet etching is used in the gate electrode 17.

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