| 摘要 |
PROBLEM TO BE SOLVED: To solve a problem wherein laser characteristics are degraded especially at a high temperature since element resistance is high in a DFB laser having an InGaAlAs active layer. SOLUTION: On an InGaAlAs-MQW layer 104 formed on an n-type InP substrate 101, a p-type InGaAlAs-GRIN-SCH layer 105, a p-type InAlAs electron stop layer 106, and a p-type diffraction grating layer 107 are layered in this order. After forming a diffraction grating, a p-type InP clad layer 108 and a p-type InGaAs contact layer are regrown sequentially, to fabricate a ridge laser. The depth of the unevenness of the diffraction grating in the p-type diffraction grating layer 107 is smaller than the thickness of the layer 107. COPYRIGHT: (C)2009,JPO&INPIT
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