发明名称 SEQUENTIAL ACCESS MEMORY METHOD
摘要 A sequential access memory ("SAM") device, system and method is provided that includes a memory array configured to store a group of bytes on each of a plurality of rows. A plurality of bit-lines transfer each of the group of bytes into and out of the memory array, and a pre-charging unit is configured to pre-charge the plurality of bit-lines once per each transfer of one of the group of bytes into or out of one of the plurality of rows. The device operates by accessing a memory array in a SAM device by activating a selected row in the memory array, pre-charging a plurality of bit-lines that provide access to the memory array, and accessing the memory array before the plurality of bit-lines are pre-charged a second time.
申请公布号 US2009122629(A1) 申请公布日期 2009.05.14
申请号 US20090353070 申请日期 2009.01.13
申请人 MICRON TECHNOLOGY, INC. 发明人 WARNER DAVID J.
分类号 G11C7/00;G11C8/00 主分类号 G11C7/00
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