| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a charge trap type nonvolatile semiconductor memory capable of reducing current consumption. <P>SOLUTION: The nonvolatile semiconductor memory includes a semiconductor substrate 1, a first gate electrode WG, a second gate electrode CG, a charge trapping film 22, and a tunnel insulating film 23. The first gate electrode WG is formed on the surface of the semiconductor substrate 1 through a first gate insulating film 10. The second gate electrode CG is formed on the surface of the semiconductor substrate 1 through the second gate insulating film 20 and being adjacent to the first gate electrode WG through an insulating film 20. The charge trapping film 22 formed at least in a trap region RT surrounded by the semiconductor substrate 1, the first gate electrode WG and the second gate electrode CG. The tunnel insulating film 23 is formed between the charge trapping film 22 and the second gate electrode CG. In one of programming and erasing, electrons are injected into the charge trapping film 22 from the second gate electrode CG through the tunnel insulating film 23 by FN (Fowler-Nordheim) tunneling method. <P>COPYRIGHT: (C)2009,JPO&INPIT</p> |
