发明名称 POWER SEMICONDUCTOR MODULE
摘要 <p><P>PROBLEM TO BE SOLVED: To provide a power semiconductor module in which a plurality of power semiconductor elements are connected to form a module, and which reduces and equalizes parasitic inductance of wiring without limitation of arrangement and the number of the power semiconductor elements. <P>SOLUTION: The power semiconductor module includes patterns on a substrate, which are a first electrode pattern and a second electrode pattern connected to two electrode as a first electrode and a second electrode of the power semiconductor element, a first electrode wiring conductor wired between the first electrode pattern and an external connection terminal, and a second electrode wiring conductor wired between the second electrode pattern and the external connection terminal. The second electrode wiring conductor is connected at a point of the second electrode pattern closer to one direction in an axial direction from an intermediate point of alignment of a connection part where a lead from the second electrode is connected, and the second electrode wiring conductor includes a second electrode arm extending in approximately parallel to an axis, and a length of a parallel part to the axis of the second electrode arm has more than a half of a length of alignment with the power semiconductor elements arranged. <P>COPYRIGHT: (C)2009,JPO&INPIT</p>
申请公布号 JP2009105454(A) 申请公布日期 2009.05.14
申请号 JP20090028418 申请日期 2009.02.10
申请人 MITSUBISHI ELECTRIC CORP 发明人 OI TAKESHI;MATSUMOTO HIDEO
分类号 H01L25/07;H01L25/18 主分类号 H01L25/07
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