| 摘要 |
PROBLEM TO BE SOLVED: To solve the problem wherein wet etching of an aluminum film suffers, even though isotropic etching characteristics are known, from anisotropy appearing that follows rotation, because a wafer is rotated at a high speed so that it is difficult to manage the wiring shape of a wafer outer circumferential part. SOLUTION: The manufacturing method of a semiconductor device is such that in wet etching of an aluminum film, there are mounted two full-cone nozzles: with one nozzle being installed at a position enabling a chemical solution to be applied over the entire surface of a wafer and the other nozzle being installed at a wafer center part, immediately close to the wafer, where a chemical solution concentration becomes thin so that the semiconductor device can be manufactured with less dependence on rotation and with improved etching rate uniformity. COPYRIGHT: (C)2009,JPO&INPIT |
