| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor manufacturing method and a semiconductor manufacturing device that can increase a rate of normal-temperature epitaxial growth using a Cl-based source gas and suppress a decrease in productivity resulting from cleaning. SOLUTION: The manufacturing method of the present invention includes: holding a wafer (w) in a reaction chamber 11; supplying a first process gas containing a source gas and a second process gas composed of a hydrogen gas or inert gas onto the wafer (w) alternately in a rectified state; and rotating and heating the wafer (w) to deposit a film on the wafer (w). COPYRIGHT: (C)2009,JPO&INPIT
|
