| 摘要 |
PROBLEM TO BE SOLVED: To provide a manufacturing method of a semiconductor device that can prevent a semiconductor substrate of a device having a metal layer bonded to an electrode frame from cracking even when the metal layer to be stacked on the reverse surface of the semiconductor substrate is made thin. SOLUTION: Disclosed is the manufacturing method of the semiconductor device in which the metal layer is formed on the reverse surface of the semiconductor substrate of a wafer having devices formed in regions sectioned by a plurality of streets formed in a lattice shape on the top surface of the semiconductor substrate and the wafer is cut along the plurality of streets to be divided into the individual devices, the manufacturing method of the semiconductor device including a V-groove forming step of forming V-shaped cutting grooves from the reverse surface side of the semiconductor substrate with a V-shaped cutting blade, a processing strain removing step of removing processing strain remaining on exposed surfaces of the V-shaped cutting grooves formed on the semiconductor substrate, a metal layer forming step of stacking the metal layer on the reverse surface of the semiconductor substrate, and a cutting step of cutting the wafer between the bottom of the V-shaped cutting groove and the top surface of the semiconductor substrate along the streets to divide the wafer into the individual devices. COPYRIGHT: (C)2009,JPO&INPIT
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