| 摘要 |
PROBLEM TO BE SOLVED: To provide an etching liquid and etching method, allowing a treatment at a high etching speed while having anisotropy, in an etching treatment of silicon, in particular, an etching treatment of silicon in a manufacturing process of an MEMS component or a semiconductor device. SOLUTION: This silicon etching liquid is characterized by anisotropically dissolving single-crystal silicon by using an aqueous solution containing quaternary ammonium hydroxide, and carbodihydrazide and/or guanidine salt. This etching method of silicon uses the etching liquid. COPYRIGHT: (C)2009,JPO&INPIT
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