SEMICONDUCTOR SUBSTRATE AND METHOD OF MANUFACTURING THE SAME, AND SEMICONDUCTOR DEVICE

摘要

PROBLEM TO BE SOLVED: To reduce a defect (for instance, displacement) of a metamorphic substrate growing an InP-based semiconductor device by using a compression strain layer and a tensile strain layer. SOLUTION: This semiconductor substrate includes: a gallium arsenide substrate 100; a buffer layer 101 formed on the gallium arsenide substrate 100; and a strain compensation structure layer 105 formed by stacking, on the buffer layer 101, the tensile strain layer 105a formed of a material having a small lattice constant in an in-plane direction relative to that of the buffer layer 101, and the compression strain layer 105b formed of a material having a large lattice constant in an in-plane direction relative to that of the buffer layer 101. COPYRIGHT: (C)2009,JPO&INPIT