| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of manufacturing a semiconductor device executing stable device separation by using selective epitaxial growth. SOLUTION: In the method of manufacturing the semiconductor device manufactured by stacking a semiconductor layer on a semiconductor substrate, when the semiconductor devices on the semiconductor substrate are separated, device units to be separated are enclosed by an insulation film, and the semiconductor device is formed by stacking the semiconductor layer in the enclosure. COPYRIGHT: (C)2009,JPO&INPIT
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