发明名称 MASK PATTERN DIMENSIONAL INSPECTION APPARATUS AND METHOD
摘要 A sidewall shape correction function is determined in advance which represents the relationship of the difference between contour positions of two or more items of pattern contour position data of different thresholds obtained from an SEM image and optical pattern contour positions determined through an optical method. Two or more items of pattern contour position data of different thresholds are obtained from SEM image data on which a lithographic simulation is to be conducted. Pseudo-optical pattern contour position data are determined from the contour position difference and the sidewall shape correction function. A lithographic simulation is conducted using the pseudo-optical pattern contour position data.
申请公布号 US2009123058(A1) 申请公布日期 2009.05.14
申请号 US20080268003 申请日期 2008.11.10
申请人 ITO MASAMITSU 发明人 ITO MASAMITSU
分类号 G06K9/00;G01N21/00;G01N23/225;G03F1/84;G03F1/86;G05B13/04 主分类号 G06K9/00
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