发明名称 METHOD TO DECREASE THIN FILM TENSILE STRESSES RESULTING FROM PHYSICAL VAPOR DEPOSITION
摘要 A method and apparatus for a backside metallization of a wafer is provided. The wafer comprised of a first substance is bent by creating tension on a backside and creating compression on a front side prior to deposition of a thin film of a second substance. After deposition, the wafer is released and the thin film deposited on the wafer exhibits less tensile stress than if the thin film was deposited on a flat wafer.
申请公布号 US2009124067(A1) 申请公布日期 2009.05.14
申请号 US20070940220 申请日期 2007.11.14
申请人 INTEL CORPORATION 发明人 CONTES ANDREW N.;LI ERIC J.;URQUIZA ARTURO
分类号 H01L21/20 主分类号 H01L21/20
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