METHOD OF MANUFACTURING VERTICAL PHASE CHANGE MEMORY DEVICE

摘要

PROBLEM TO BE SOLVED: To provide a method of manufacturing a variable resistive memory element for forming a smaller bottom electrode since it is required to reduce a contact area of the bottom electrode with a variable resistive material so as to reduce power consumption in a variable resistive memory device. SOLUTION: A smaller bottom electrode can be formed by combining anisotropic etching treatment and isotropic etching treatment. COPYRIGHT: (C)2009,JPO&INPIT