发明名称 MEMORY VOLTAGE CYCLE ADJUSTMENT
摘要 The present disclosure includes various method, device, system, and module embodiments for memory cycle voltage adjustment. One such method embodiment includes counting a number of process cycles performed on a first memory block in a memory device. This method embodiment also includes adjusting at least one program voltage, from an initial program voltage to an adjusted voltage, in response to the counted number of process cycles.
申请公布号 US2009122608(A1) 申请公布日期 2009.05.14
申请号 US20090354975 申请日期 2009.01.16
申请人 MICRON TECHNOLOGY, INC. 发明人 ARITOME SEIICHI
分类号 G11C16/00;G11C8/00;G11C16/04;G11C16/06 主分类号 G11C16/00
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