发明名称 |
Manufacturing method for forming an integrated circuit device and corresponding integrated circuit device |
摘要 |
The present invention provides a manufacturing method for forming an integrated circuit device and to a corresponding integrated circuit device. The manufacturing method for forming an integrated circuit device comprises the steps of: forming a first level on a substrate; forming a second level above the first level; forming a cap layer on the second level which covers a first region of the level and leaves a second region uncovered; and simultaneously etching a first contact hole in the first region and a second contact hole in the second region such that the etching is selective to the cap layer in the second region and proceeds to a greater depth in the first region.
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申请公布号 |
US2009121314(A1) |
申请公布日期 |
2009.05.14 |
申请号 |
US20070983899 |
申请日期 |
2007.11.13 |
申请人 |
BOSHOLM OLE;LEPPER MARCO;SPRINGER GOETZ;WEBER DETLEF;BONSDORF GRIT;PIETZSCHMANN FRANK |
发明人 |
BOSHOLM OLE;LEPPER MARCO;SPRINGER GOETZ;WEBER DETLEF;BONSDORF GRIT;PIETZSCHMANN FRANK |
分类号 |
H01L23/00;H01L21/768 |
主分类号 |
H01L23/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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