发明名称 |
Solution-Based Deposition Process for Metal Chalcogenides |
摘要 |
A solution of a hydrazine-based precursor of a metal chalcogenide is prepared by adding an elemental metal and an elemental chalcogen to a hydrazine compound. The precursor solution can be used to form a film. The precursor solutions can be used in preparing field-effect transistors, photovoltaic devices and phase-change memory devices.
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申请公布号 |
US2009121211(A1) |
申请公布日期 |
2009.05.14 |
申请号 |
US20090355189 |
申请日期 |
2009.01.16 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
MITZI DAVID B.;RAOUX SIMONE |
分类号 |
H01L45/00;H01L21/06;H01L29/18 |
主分类号 |
H01L45/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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