| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor manufacturing device or the like which forms an alumina film containingα-alumina and high in in-plane uniformity even if annealing is not executed at high temperature. SOLUTION: This semiconductor manufacturing device is used for forming the alumina film containingα-alumina on a substrate W for manufacturing a semiconductor device. A substrate holder (wafer boat 25) holds a plurality of substrates W in a shelf-like form, and carries them in a vertical reaction container 2. A first gas supply means 31 supplies a material gas containing aluminum chloride to height positions corresponding to the respective substrates W held to the substrate holder 25, and a second gas supply means 34 supplies an oxidation gas containing steam, to similar height positions. A control part 5 outputs a control signal for supplying the material and the oxidation gas at the same time to react them with each other, into the reaction container 2 which is exhausted by exhaust means 41 and 42, and the processing atmosphere of which is heated to a temperature in the range of 800-1,000°C by a heating means. COPYRIGHT: (C)2009,JPO&INPIT
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