SNO-BASED SPUTTERING TARGET

摘要

This invention provides an SnO2-based sinter target which has a reduced absolute value of the stress of a sputtered film and causes no significant film separation from a peripheral structure of a sputter cathode. The SnO2-based sputtering target is formed of a sinter comprising more than 10 ppm and less than 1% by mass of Sb2O3 and not more than 20% by mass in total of Ta2O5 and/or Nb2O5 with the balance consisting of SnO2 and unavoidable impurities.