| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor light-emitting element that minimizes reflection or absorption of emitted light, ensures maximum light emitting area to maximize the luminous efficiency, and at the same time allow uniform current spreading by using an electrode having a small area, and enables mass production at low cost with high reliability and high quality, to provide a manufacturing method thereof, and to provide a semiconductor light emitting element package using the semiconductor light-emitting element. <P>SOLUTION: A semiconductor light-emitting element comprises a first conductivity-type semiconductor layer, an active layer, a second conductivity-type semiconductor layer, a second electrode layer, an insulating layer, a first electrode layer, and a conductive substrate that are sequentially laminated. The second electrode layer includes a partially exposed region, at the interface between the second electrode layer and the second conductivity-type semiconductor layer. The first electrode layer comprises one or more contact holes that are electrically connected to the first conductivity-type semiconductor layer, are electrically insulated from the second conductivity-type semiconductor layer and the active layer, and extend from one surface of the first electrode layer to at least part of the first conductivity-type semiconductor layer. <P>COPYRIGHT: (C)2009,JPO&INPIT |
