| 摘要 |
PROBLEM TO BE SOLVED: To provide a high-reliability semiconductor laser array element, reducing an electrical interference or an thermal interference between semiconductor laser elements adjacent to each other. SOLUTION: This semiconductor laser array element is composed by stacking at least an n-type clad layer 2 formed on an n-type semiconductor substrate 1, an active layer 3 comprising a quantum well structure on the n-type clad layer 2; and p-type clad layers 4a and 4b located on the active layer 3 and each having a ridge part 16 and strip groove parts 15 on both sides of the ridge part 16. The semiconductor laser array element has an n-type semiconductor region 7 in the p-type clad layer 4a present on the lower side relative to the stripe groove part 15, and is characterized in that the thickness in the stacking direction of the n-type semiconductor region 7 is not smaller than 50% of that in the stacking direction of the p-type clad layer 4a present on the lower side relative to the stripe groove part 15. COPYRIGHT: (C)2009,JPO&INPIT
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