发明名称 |
INTEGRATED CIRCUIT COMPRISING A TRANSISTOR AND A CAPACITOR, AND FABRICATION METHOD |
摘要 |
An integrated circuit includes a substrate and at least one active region. A transistor produced in the active region separated from the substrate. This transistor includes a source or drain first region and a drain or source second region which are connected by a channel. A gate structure is position on top of said channel and operates to control the channel. The gate structure is formed in a trench whose sidewalls have a shape which converges (narrows) in the width dimension towards the substrate. A capacitor is also formed having a first electrode, a second electrode and a dielectric layer between the electrodes. This capacitor is also formed in a trench. An electrode line is connected to the first electrode of the capacitor. The second electrode of the capacitor is formed in a layer shared in common with at least part of the drain or source second region of the transistor. A bit line is located beneath the gate structure. The integrated circuit may, for example, be a DRAM memory cell.
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申请公布号 |
US2009121269(A1) |
申请公布日期 |
2009.05.14 |
申请号 |
US20080173702 |
申请日期 |
2008.07.15 |
申请人 |
STMICROELECTRONICS (CROLLES 2) SAS |
发明人 |
CAILLAT CHRISTIAN;FERRANT RICHARD |
分类号 |
H01L27/108;H01L21/8242 |
主分类号 |
H01L27/108 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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