| 摘要 |
<p>Disclosed is a wiring structure comprising an interlayer insulating film formed on a lower wiring, an connection opening formed in the interlayer insulating film for exposing the lower wiring therefrom, a plurality of carbon nanotubes formed on the bottom of the connection opening, an interconnect metal introduced into the connection opening for filling up the spaces between the carbon nanotubes, and an upper wiring formed on top of the connection opening. A Ti layer (9) is formed between the carbon nanotubes and the upper wiring.</p> |
