<p>Provided is a high-voltage complementary metal-oxide semiconductor (CMOS) charge pump. The high-voltage CMOS charge pump includes a first Dickson charge pump for doubling a supply voltage based on an input clock signal and a complementary input clock signal with reversed phases to each other; a level shifter for doubling voltage levels of the input clock signal and the complementary input clock signal based on an output signal and a complementary output signal of the first Dickson charge pump as power sources, to thereby output a doubled-output clock signal and a doubled-complementary output clock signal; and a second Dickson charge pump for doubling voltage levels of the output signal and the complementary output signal based on the doubled-output clock signal and the doubled-complementary output clock signal from the level shifter.</p>
申请公布号
WO2009061049(A1)
申请公布日期
2009.05.14
申请号
WO2008KR02820
申请日期
2008.05.21
申请人
ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTE;KIM, SUNG-EUN;KIM, JIN-KYUNG;HYOUNG, CHANG-HEE;KANG, SUNG-WEON
发明人
KIM, SUNG-EUN;KIM, JIN-KYUNG;HYOUNG, CHANG-HEE;KANG, SUNG-WEON