TWO-PHASE PROGRAMMING OF A FLASH MEMORY,申请号KR20067017507-传众专利搜索

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发明名称	TWO-PHASE PROGRAMMING OF A FLASH MEMORY
摘要
申请公布号	KR100897010(B1)	申请公布日期	2009.05.14
申请号	KR20067017507	申请日期	2006.08.30
申请人		发明人
分类号	G11C16/10;G11C11/34;G11C16/04;G11C16/12;G11C16/34	主分类号	G11C16/10
代理机构		代理人
主权项
地址

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