| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of manufacturing a thin film transistor having excellent conduction characteristics between a source electrode, a drain electrode and a semiconductor layer, and to provide the thin film transistor manufactured by the manufacturing method. SOLUTION: A gate electrode 6 is formed on the upper surface of a substrate 2 of a thin film transistor 1. A gate insulating layer 5 is formed in such a manner that the gate electrode 6 is covered. A source electrode 3, a drain electrode 4, and a semiconductor layer 7 are provided on the upper surface of the gate insulating layer 5. A silver nano ink 9 is applied to the gate insulating layer 5 between the source electrode 3 and the semiconductor layer 7 in such a manner that the end of the source electrode 3 and the end of the semiconductor layer 7 are covered, and the source electrode and the semiconductor layer are electrically connected (in contact) with each other. A silver nano ink 10 is applied to the gate insulating layer 5 between the drain electrode 4 and the semiconductor layer 7 in such a manner that the end of the drain electrode 4 and the end of the semiconductor layer 7 are covered and the drain electrode and the semiconductor layer are electrically connected (in contact) with each other. COPYRIGHT: (C)2009,JPO&INPIT
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