发明名称 SEMICONDUCTOR MEMORY DEVICE HAVING TEST CIRCUIT
摘要 A semiconductor memory device including a test circuit capable of reducing test time includes a test circuit for generating leakage current in the semiconductor memory device in a standby state in response to a test mode signal and a standby signal that provides standby state information of the semiconductor memory device.
申请公布号 US2009122625(A1) 申请公布日期 2009.05.14
申请号 US20080172949 申请日期 2008.07.14
申请人 HYNIX SEMICONDUCTOR, INC. 发明人 CHUN JUN HYUN
分类号 G11C29/00 主分类号 G11C29/00
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