发明名称 |
SEMICONDUCTOR MEMORY DEVICE HAVING TEST CIRCUIT |
摘要 |
A semiconductor memory device including a test circuit capable of reducing test time includes a test circuit for generating leakage current in the semiconductor memory device in a standby state in response to a test mode signal and a standby signal that provides standby state information of the semiconductor memory device.
|
申请公布号 |
US2009122625(A1) |
申请公布日期 |
2009.05.14 |
申请号 |
US20080172949 |
申请日期 |
2008.07.14 |
申请人 |
HYNIX SEMICONDUCTOR, INC. |
发明人 |
CHUN JUN HYUN |
分类号 |
G11C29/00 |
主分类号 |
G11C29/00 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|