发明名称 DEVICE AND DEVICE MANUFACTURING METHOD
摘要 <p>A device is provided with a first substrate whose main component is silicon dioxide; a second substrate whose main component is silicon or a compound semiconductor or silicon dioxide or a fluoride; and a bonding functional intermediate layer arranged between the first substrate and the second substrate. The first substrate is bonded to the second substrate through the bonding functional intermediate layer by room-temperature bonding wherein a first surface of the first substrate to which sputtering is performed is brought into contact with a second surface of the second substrate to which sputtering is performed. At this time, the material of the bonding functional intermediate layer is different from the main component of the first substrate and that of the second substrate and is selected from among light transmitting materials of an oxide, a fluoride and a nitride.</p>
申请公布号 WO2009060693(A1) 申请公布日期 2009.05.14
申请号 WO2008JP68544 申请日期 2008.10.14
申请人 MITSUBISHI HEAVY INDUSTRIES, LTD.;NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCEAND TECHNOLOGY;UTSUMI, JUN;GOTO, TAKAYUKI;IDE, KENSUKE;TAKAGI, HIDEKI;FUNAYAMA, MASAHIRO 发明人 UTSUMI, JUN;GOTO, TAKAYUKI;IDE, KENSUKE;TAKAGI, HIDEKI;FUNAYAMA, MASAHIRO
分类号 H01L21/02;B23K20/00;H01L23/02;H01L27/14;H01L31/02 主分类号 H01L21/02
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