发明名称 |
METHOD OF ACHIEVING ATOMICALLY SMOOTH SIDEWALLS IN DEEP TRENCHES, AND HIGH ASPECT RATIO SILICON STRUCTURE CONTAINING ATOMICALLY SMOOTH SIDEWALLS |
摘要 |
A high aspect ratio silicon structure comprises a silicon substrate (110) having a surface (111), an electrically insulating layer (120) over portions of the silicon substrate, a hardmask (130) over the electrically insulating layer, and a deep silicon trench (140) formed in the substrate. The deep silicon trench comprises a floor (141) and sidewalls (142) extending away from the floor, and the sidewalls are atomically smooth. In an embodiment, the atomically smooth sidewalls are achieved by providing a substrate having the deep silicon trench formed therein, forming a layer of water over the substrate and within the deep silicon trench, and exposing the substrate to a hydrogen fluoride vapor and to an ozone gas.
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申请公布号 |
WO2009042983(A3) |
申请公布日期 |
2009.05.14 |
申请号 |
WO2008US78044 |
申请日期 |
2008.09.28 |
申请人 |
INTEL CORPORATION;RACHMADY, WILY;DOYLE, BRIAN;KAVALIEROS, JACK;SINGH, RAJWINDER |
发明人 |
RACHMADY, WILY;DOYLE, BRIAN;KAVALIEROS, JACK;SINGH, RAJWINDER |
分类号 |
H01L21/8242;H01L21/3065;H01L27/108 |
主分类号 |
H01L21/8242 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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