| 摘要 |
<P>PROBLEM TO BE SOLVED: To simply emit a multi-wavelength light with a simple structure using a sole light emitting layer independently constituted from a group III nitride semiconductor layer. <P>SOLUTION: A light-emitting device includes a light emitting layer 10 in a structure of a multi-quantum well equipped with a barrier layer 11b comprising a group III nitride semiconductor formed on the surface of a substrate, and a well layer 11a comprising an indium-containing group III nitride semiconductor. The light emitting layer 10 is formed of a plurality of piled layers 11 with the unit piled portions 11m comprising the well layers and the barrier layers stacked thereon, and the unit piled portion 11m of the piled layer 11 is formed of the well layers and the barrier layers each with the same thickness. Each of the piled layers 11, 12 has the barrier layers of different thickness in the unit piled portion. Total number of the unit piled portions 11m..., 12m... is 4 or more and 30 or less in all stacks of the light emitting layer, and the number of the unit piled portions is 2 or more and 20 or less in the piled layer comprising the unit piled portion with the thinnest barrier layer. <P>COPYRIGHT: (C)2009,JPO&INPIT |
