| 摘要 |
The present invention is one or more implementations is a method of fabricating a semiconductor for improved oxide thickness control, defining a process tool, determining and evaluating performance variables, determining a performance impact factor and thereafter modifying control of the process tool in the fabrication process to operate in direct relation to the determined results of the present invention. The present invention sets forth definitive advantages in reducing engineering time, improving process controls and improving cycle-times.
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