发明名称 METHODS OF SELECTIVE DEPOSITION OF FINE PARTICLES ONTO SELECTED REGIONS OF A SUBSTRATE
摘要 A method for depositing fine particles from a suspension on selected regions of a substrate is disclosed. The particles are deposited on selected regions of a clean hydrophobic semiconductor surface that are surrounded by a wetting boundary which includes a mesa formed by etching through a silicon-on-insulator (SOI) film and an underlying buried oxide of an SOI substrate. The process is well suited for the growth of semiconductor nanowires that nucleates from fine particle used as a catalyst.
申请公布号 US2009124092(A1) 申请公布日期 2009.05.14
申请号 US20090352290 申请日期 2009.01.12
申请人 INTERNATIONAL BUSINESS MACHINES CORPORATION 发明人 COHEN GUY MOSHE
分类号 H01L21/30 主分类号 H01L21/30
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