发明名称 POWER SUPPLYING CIRCUIT AND PHASE-CHANGE RANDOM ACCESS MEMORY INCLUDING THE SAME
摘要 Embodiments of the invention provide a power supplying circuit (PSC) and a phase-change random access memory (PRAM) including the PSC. According to an aspect of the invention, the PSC includes: a first voltage generator configured to output a first voltage to a first terminal; and a second voltage generator configured to output a second voltage to a second terminal, the second voltage generator including: a voltage pump unit configured to output the second voltage based on a clock signal and a pump control signal; a pump output detector coupled to the voltage pump unit, the pump output detector configured to output a pump output detection signal; and a discharging unit coupled to the voltage pump unit, the discharging unit configured to discharge a level of the second voltage to a predetermined level in response to a discharge signal. Embodiments of the invention may prevent write and/or read malfunctions that can occur due to changes in the level of a voltage supplied to PRAM cell blocks.
申请公布号 US2009122601(A1) 申请公布日期 2009.05.14
申请号 US20080251761 申请日期 2008.10.15
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 CHO BEAK-HYUNG;KIM KWANG-HO;LEE WON-SEOK
分类号 G11C11/00;G11C5/14;G11C7/00;G11C8/00 主分类号 G11C11/00
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