发明名称 |
POWER SUPPLYING CIRCUIT AND PHASE-CHANGE RANDOM ACCESS MEMORY INCLUDING THE SAME |
摘要 |
Embodiments of the invention provide a power supplying circuit (PSC) and a phase-change random access memory (PRAM) including the PSC. According to an aspect of the invention, the PSC includes: a first voltage generator configured to output a first voltage to a first terminal; and a second voltage generator configured to output a second voltage to a second terminal, the second voltage generator including: a voltage pump unit configured to output the second voltage based on a clock signal and a pump control signal; a pump output detector coupled to the voltage pump unit, the pump output detector configured to output a pump output detection signal; and a discharging unit coupled to the voltage pump unit, the discharging unit configured to discharge a level of the second voltage to a predetermined level in response to a discharge signal. Embodiments of the invention may prevent write and/or read malfunctions that can occur due to changes in the level of a voltage supplied to PRAM cell blocks.
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申请公布号 |
US2009122601(A1) |
申请公布日期 |
2009.05.14 |
申请号 |
US20080251761 |
申请日期 |
2008.10.15 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
CHO BEAK-HYUNG;KIM KWANG-HO;LEE WON-SEOK |
分类号 |
G11C11/00;G11C5/14;G11C7/00;G11C8/00 |
主分类号 |
G11C11/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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