EPITAXIAL FILM GROWING METHOD, WAFER SUPPORTING STRUCTURE AND SUSCEPTOR

摘要

An annular step section formed on the outer circumference of the bottom board of a wafer storing section is arranged in a region where a wafer rear surface portion up to 1-6mm to the wafer center from a boundary between a chamfered surface abuts to. As a result, an epitaxial wafer having no scratch in a boundary region between the rear surface and the chamfered surface is manufactured, and particles generated due to the scratches in a device process are eliminated.