| 摘要 |
PROBLEM TO BE SOLVED: To provide a resistance change memory device which erases data of a cell array with an erase circuit of comparatively small driving performance. SOLUTION: The resistance change memory device is equipped with: a cell array having memory cells containing a variable resistance element which stores a resistance value as data in a nonvolatile manner arranged therein; and the erase circuit which resets the memory cell in the cell array before writing data. The erase circuit has: a current generation circuit; a plurality of switching elements interposed between respective current paths which supply output of the current generation circuit to a plurality of partial cell arrays obtained by dividing the cell array as an erasure current; and a control circuit which turns on to drive each of the plurality of switching elements. COPYRIGHT: (C)2009,JPO&INPIT |
