发明名称 SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE
摘要 PROBLEM TO BE SOLVED: To produce a desired delay amount, even at a low voltage, in a delay circuit using an operational amplifier. SOLUTION: In a semiconductor integrated circuit device, a delay element section 11 charges a capacitor C1 in accordance with an output from an inverter INV 1. A delay element section 12 that complementarily operates to the delay element section 11 discharges a capacitor C2 in accordance with an output from an inverter INV 2. At this point, a ratio of resistance value of a resistance element R1 provided in the delay element section 11 and a resistance value of a resistance element R2 provided in the delay element section 12 is made different. Thus, even at a low voltage, a gate-source voltage Vgs 2 of an NMOS transistor 13b constituting an operational amplifier circuit 13 can be ensured equally to or more than a threshold of the NMOS transistor 13b. COPYRIGHT: (C)2009,JPO&INPIT
申请公布号 JP2009105760(A) 申请公布日期 2009.05.14
申请号 JP20070276797 申请日期 2007.10.24
申请人 TOSHIBA CORP 发明人 OKUKAWA YUKI;MAKINO HIDEKAZU;KOYANAGI MASARU
分类号 H03K5/13 主分类号 H03K5/13
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