发明名称 FIELD EMISSION ELEMENT WITH SILICIDE NANOWIRE AND ITS MANUFACTURING METHOD
摘要 <p><P>PROBLEM TO BE SOLVED: To provide a field emission element which can be applied to a display and a high efficiency lamp field and provide its manufacturing method. <P>SOLUTION: The manufacturing method of the field emission element which is provided a substrate and an anode and is applied to a display field and a high efficiency lamp includes a step in which a metallic catalyst is coated on an upper surface of the substrate, a step in which the metallic catalyst is made to react with silicon to form a metallic cinocide layer, and a step in which a metallic silicide layer is grown on the metallic silicide layer by a metallic diffusion. A doping step and a step in which a sharp shape is formed are saved and a manufacturing process can be shortened to reduce a manufacturing cost and improve efficiency, and since a silicide nanowire can be grown by using all of a physical deposition and a chemical deposition method, an application range can be expanded. <P>COPYRIGHT: (C)2009,JPO&INPIT</p>
申请公布号 JP2009105049(A) 申请公布日期 2009.05.14
申请号 JP20080270434 申请日期 2008.10.21
申请人 KOREA MACH RES INST 发明人 KIM JOON DONG;HAN CHANG SOO;LEE EUNG SUG
分类号 H01J9/02;H01J1/304;H01J31/12;H01J63/06 主分类号 H01J9/02
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